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| 2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Ratings Unit V 600 A 12 A 48 V 30 A 12 mJ 183 kV/s 20 kV/s 5 2.16 W 70 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation Voltage VISO *5 2 kVrms *1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch <150C = *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 600V *5 t=60sec, f=60Hz = = = = Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions VGS=0V ID=1mA ID= 250A VDS=VGS Tch=25C VDS=600V VGS=0V Tch=125C VDS=480V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 VCC=250V ID=10A VGS=10V L=2.33mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.75 Units V V A nA S pF 4 10 0.58 8 1200 1800 140 210 6 9 17 26 15 23 35 53 7 11 30 45 11 16.5 10 15 1.00 0.75 5.0 ns nC 12 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.79 58.0 Units C/W C/W 1 2SK3502-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 100 500 450 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V 80 400 350 IAS=5A 60 300 EAS [mJ] 0 25 50 75 100 125 150 PD [W] 250 IAS=8A 200 150 IAS=12A 40 20 100 50 0 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 22 20 18 10 16 14 20V 10V 8V 7.5V Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 12 7.0V 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 VGS=6.5V ID[A] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 2.0 VGS=6.5V 7.0V 1.5 RDS(on) [ ] 10 gfs [S] 1.0 7.5V8V 10V 20V 1 0.5 0.1 0.1 1 10 0.0 0 5 10 15 20 ID [A] ID [A] 2 2SK3502-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 2.0 1.8 1.6 1.4 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA max. 5.0 VGS(th) [V] RDS(on) [ ] 4.5 4.0 3.5 3.0 2.5 min. 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 typ. max. 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics 24 22 20 18 16 480V Vcc= 120V 300V 1n VGS=f(Qg):ID=10A, Tch=25C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 1p 10 -1 C [F] 100p Coss 10p Crss 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 IF=f(VSD):80s Pulse test,Tch=25C 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 1 ID [A] 3 2SK3502-01MR FUJI POWER MOSFET 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current vs Pulse width IAV=f(tAV ):starting Tch=25C,Vcc=60V Avalanche Current IAV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] http://www.fujielectric.cp.jp/denshi/scd/ 4 |
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